发明名称 |
Method for manufacturing semiconductor device with organic semiconductor layer |
摘要 |
It is an object of the present invention to form an organic transistor including an organic semiconductor having high crystallinity without loosing an interface between an organic semiconductor of a channel where carriers are spread out and a gate insulating layer and deteriorating a yield. A semiconductor device according to the present invention has a stacked structure of organic semiconductor layers, and at least the upper organic semiconductor layer is in a polycrystalline or a single crystalline state and the lower organic semiconductor layer is made of a material serving as a channel. Carrier mobility can be increased owing to the upper organic semiconductor layer having high crystallinity; thus, insufficient contact due to the upper organic semiconductor layer can be compensated by the lower organic semiconductor layer.
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申请公布号 |
US8501530(B2) |
申请公布日期 |
2013.08.06 |
申请号 |
US201113010395 |
申请日期 |
2011.01.20 |
申请人 |
FURUKAWA SHINOBU;IMAHAYASHI RYOTA;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
FURUKAWA SHINOBU;IMAHAYASHI RYOTA |
分类号 |
H01L21/00;H01L21/22;H01L21/38;H01L51/40 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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