发明名称 |
Nano-electro-mechanical system (NEMS) structures with actuatable semiconductor fin on bulk substrates |
摘要 |
Semiconductor devices are formed with a nano-electro-mechanical system (NEMS) logic or memory on a bulk substrate. Embodiments include forming source/drain regions directly on a bulk substrate, forming a fin connecting the source/drain regions, forming two gates, one on each side of the fin, the two gates being insulated from the bulk substrate, and forming a substrate gate in the bulk substrate. The fin is separated from each of the two gates and the substrate gate with an air gap.
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申请公布号 |
US8502279(B2) |
申请公布日期 |
2013.08.06 |
申请号 |
US201113108439 |
申请日期 |
2011.05.16 |
申请人 |
TOH ENG HUAT;QUEK ELGIN;TAN CHUNG FOONG;GLOBALFOUNDRIES SINGAPORE PTE. LTD. |
发明人 |
TOH ENG HUAT;QUEK ELGIN;TAN CHUNG FOONG |
分类号 |
H01L29/84;H01L21/00;H01L21/336;H01L21/338;H01L29/66 |
主分类号 |
H01L29/84 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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