发明名称 Electronic Device and Method for Increasing Reliability of Bipolar Transistors Under High Voltage Conditions
摘要 The invention relates to an electronic device with a bipolar transistor having an emitter, a base and a collector. The base has a first region of a first concentration of the first dopant for forming an electrically active region of the base and a second region of a second concentration of the first dopant close to the surface of the base region. The first region is separated from the second region by a region of a third concentration of the first dopant and the third concentration is lower than the first and the second concentration.
申请公布号 US2013193557(A1) 申请公布日期 2013.08.01
申请号 US201213557394 申请日期 2012.07.25
申请人 MENZ PHILIPP;STAUFER BERTHOLD;HIROSHI YASUDA;TEXAS INSTRUMENTS INCORPORATED 发明人 MENZ PHILIPP;STAUFER BERTHOLD;HIROSHI YASUDA
分类号 H01L29/73;H01L29/66 主分类号 H01L29/73
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