| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor device that can suppress a current collapse phenomenon and can be improved in dielectric strength by suppressing a leak current.SOLUTION: A GaN-based HFET can suppress a current collapse by a collapse suppression film 18 formed on an undoped AlGaN layer 12. Further, a second insulation film 23 formed of SiO is formed between a gate electrode 15 and the collapse suppression film 18 and a leak current flowing to the gate electrode 15 through the collapse suppression film 18 is thereby suppressed to improve dielectric strength. First and second field plate parts 15b and 15c of the gate electrode 15 can be formed into a multi-stage structure comprising first parts 15b-1 and 15c-1 on the second insulation film 23 and second parts 15b-2 and 15c-2 on a third insulation film 27, so that electric field concentration is relaxed to reduce the leak current to the gate electrode 15. |
