| 摘要 |
PROBLEM TO BE SOLVED: To provide a polishing solution which can improve a polishing speed of a polished film and improve surface flatness after polishing in a CMP technique that planarizes an interlayer insulation film and a polished film such as a BPSG film and an STI film.SOLUTION: In a polishing solution for CMP containing cerium oxide particles, p-toluenesulfonic acid, polymer B having a carboxylic acid group or a carboxylic acid base, and water. A p-toluenesulfonic acid content to a total mass of the polishing solution is 0.001-1 mass%, a content of polymer B to the total mass of the polishing solution is 0.01-0.50 mass%, and a pH is not less than 4.0 and not more than 7.0. |
