发明名称 |
Integrating a First Contact Structure in a Gate Last Process |
摘要 |
A method is provided that includes providing a substrate; forming a transistor in the substrate, the transistor having a dummy gate; forming a dielectric layer over the substrate and transistor; forming a contact feature in the dielectric layer; and after forming the contact feature, replacing the dummy gate of the transistor with a metal gate. An exemplary contact feature is a dual contact.
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申请公布号 |
US2013196496(A1) |
申请公布日期 |
2013.08.01 |
申请号 |
US201313794621 |
申请日期 |
2013.03.11 |
申请人 |
MANUFACTURING COMPANY, LTD. TAIWAN SEMICONDUCTOR;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
YEH CHIUNG-HAN;WU MING-YUAN;THEI KONG-BENG;CHUANG HARRY;LIANG MONG-SONG |
分类号 |
H01L29/66 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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