发明名称 ETCHING METHOD AND ETCHING APPARATUS
摘要 An etching method of etching a periodic pattern formed by self-assembling a first polymer and a second polymer of a block copolymer that is capable of being self-assembled, the etching method includes supplying a high frequency power which is set such that a great amount of ion energy is distributed within a range smaller than ion energy distribution at which an etching yield of the first polymer is generated and larger than or equal to ion energy distribution at which an etching yield of the second polymer is generated, and supplying a predetermined gas, generating plasma from the supplied gas by the high frequency power, and etching the periodic pattern on a processing target object by using the generated plasma.
申请公布号 US2013196511(A1) 申请公布日期 2013.08.01
申请号 US201313746632 申请日期 2013.01.22
申请人 TOKYO ELECTRON LIMITED;TOKYO ELECTRON LIMITED 发明人 NISHIMURA EIICHI;KOTSUGI TADASHI;YAMASHITA FUMIKO
分类号 H01L21/3065;H01L21/67 主分类号 H01L21/3065
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