FINFETS AND METHODS FOR FORMING THE SAME

摘要

PURPOSE: FINFETs and methods for forming the same are provided to increase the resistance of an electrical fuse by reducing the height of the electrical fuse. CONSTITUTION: A gate dielectric (50) is formed on the sidewall of a semiconductor fin. A gate electrode (52) is formed on the gate dielectric. An isolation region includes a first part and a second part. The first part is formed on a part of the gate electrode. The second part is formed on the opposite side of the part of the gate electrode.