发明名称 |
SOURCE OF REFERENCE VOLTAGE DETERMINED THROUGH ENERGY GAP DOUBLED WIDTH |
摘要 |
FIELD: electrical engineering.SUBSTANCE: device contains five transistors, three resistors and a current source which is placed between the power supply bus and the output terminal; the first and the second resistors, via their first outputs, are connected to the output terminal; the bases of the first and the second transistors are connected to the collectors of the first and the fifth transistors; the third resistor is placed between the common bus and the second transistor emitter; the emitters of the first and the third transistors are connected to the common bus; the collector of the third transistor is connected to the output terminal; the bases of the third, the fourth and the fifth transistors are connected to the collectors of the second and the fourth transistors; the emitter of the fourth transistor is connected second output of the second resistor; the emitter of the fifth transistor is connected to the second output of the first resistor.EFFECT: obtainment of thermally stable output voltage at values closed to doubled energy gad width.3 dwg |
申请公布号 |
RU2488874(C1) |
申请公布日期 |
2013.07.27 |
申请号 |
RU20120129146 |
申请日期 |
2012.07.10 |
申请人 |
FEDERAL'NOE GOSUDARSTVENNOE BJUDZHETNOE OBRAZOVATEL'NOE UCHREZHDENIE VYSSHEGO PROFESSIONAL'NOGO OBRAZOVANIJA "JUZHNO-ROSSIJSKIJ GOSUDARSTVENNYJ UNIVERSITET EHKONOMIKI I SERVISA" (FGBOU VPO "JURGUEHS") |
发明人 |
BARILOV IVAN VASIL'EVICH;STARCHENKO EVGENIJ IVANOVICH;KUZNETSOV PAVEL SERGEEVICH |
分类号 |
G05F1/56;H03F1/30 |
主分类号 |
G05F1/56 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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