发明名称 NANO DEVICE OF VERTICAL NANOWIRE STRUCTURE USING GRAPHENE AND METHOD FOR MANUFACTURING THEREOF
摘要 PURPOSE: A nano device of a vertical nanowire structure using graphene and a method for forming the same are provided to prevent upper layer metals from penetrating into the gaps of nanowires by inserting graphene between nanowires and an upper layer in a nano device of a vertical nanowire structure. CONSTITUTION: A nano device comprises a plurality of nanowires (20), a graphene layer (30), and an upper layer. The nanowires are vertically stood on a substrate (10) at a predetermined interval. The graphene layer is formed on the upper end of the nanowires. The upper layer is formed on the upper side of the graphene layer. The upper layer is a metal electrode (40). A method for forming a nano device comprises the steps of: vertically forming a plurality of nanowires on a substrate at a predetermined interval; transferring a pre-grown graphene layer to the upper end of the nanowires; and pattering to form an upper layer on the graphene layer.
申请公布号 KR20130084562(A) 申请公布日期 2013.07.25
申请号 KR20120005434 申请日期 2012.01.17
申请人 KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY 发明人 LEE, SEOK HEE;JEONG, HYEON HO
分类号 B82B1/00;B82Y10/00 主分类号 B82B1/00
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