发明名称 |
THIN-FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
Disclosed herein is a thin film transistor. The thin film transistor is characterized in having a source interconnect layer and a drain interconnect layer. The source electrode and the drain electrode are respectively disposed above and in contact with the source interconnect layer and the drain interconnect layer. The semiconductor layer is in contact with both the source interconnect layer and the drain interconnect layer, but is not in contact with the source electrode and the drain electrode.
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申请公布号 |
US2013187149(A1) |
申请公布日期 |
2013.07.25 |
申请号 |
US201213615640 |
申请日期 |
2012.09.14 |
申请人 |
WANG HENRY;YEH CHIA-CHUN;TSAI XUE-HUNG;WANG CHIH-HSUAN;SHINN TED-HONG;E INK HOLDINGS INC. |
发明人 |
WANG HENRY;YEH CHIA-CHUN;TSAI XUE-HUNG;WANG CHIH-HSUAN;SHINN TED-HONG |
分类号 |
H01L29/786;H01L21/36 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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