发明名称 Method of manufacturing integrated circuit device
摘要 It is an object of the present invention to improve a factor which influences productivity such as variation caused by a characteristic defect of a circuit by thinning or production yield when an integrated circuit device in which a substrate is thinned is manufactured. A stopper layer is formed over one surface of a substrate, and an element is formed over the stopper layer, and then, the substrate is thinned from the other surface thereof. A method in which a substrate is ground or polished or a method in which the substrate is etched by chemical reaction is used as a method for thinning or removing the substrate.
申请公布号 US8492246(B2) 申请公布日期 2013.07.23
申请号 US201113162611 申请日期 2011.06.17
申请人 DAIRIKI KOJI;KUSUMOTO NAOTO;TSURUME TAKUYA;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 DAIRIKI KOJI;KUSUMOTO NAOTO;TSURUME TAKUYA
分类号 H01L21/82 主分类号 H01L21/82
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