Method for the production of a semiconductor structure

摘要

Semiconductor structures are produced by providing a 3C-SiC semiconductor layer containing a monocrystalline 3C-SiC layer by implantation of carbon in silicon on a first silicon substrate and applying an epitaxial layer of nitride compound semiconductor suitable for the generation of optoelectronic components onto the 3C-SiC semiconductor layer structure, wherein the epitaxial layer of nitride semiconductor is transferred onto a second substrate by bonding the nitride layer onto the second substrate surface and mechanically or chemically removing silicon and layers containing SiC, the second substrate being a metal with a reflectivity >=80% or being substantially transparent.