| 摘要 |
PURPOSE: A semiconductor device including a vertical transistor and a forming method thereof are provided to obtain a sufficient driving current by increasing a contact area between a bit line and an active region. CONSTITUTION: An active region (12) is located on the upper side of a semiconductor substrate (10). The active regions are separated by a bit line insulation layer (28). A word line (40) is extended and is buried in the active region. A capacitor (56) including a bottom electrode (50) is formed on the upper side of the word line. A bit line (27) is formed on both sides of the lower side of the active region.
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