发明名称 METHOD FOR PURIFYING SILICON
摘要 <p>The present invention relates to a method for purifying silicon, comprising at least the following steps: c) providing a container (1) that comprises silicon (10) in molten state, the container (1) having a longitudinal axis (X) and the silicon (10) in molten state defining a free surface (11) on the side opposite the bottom (4) of the container (1); d) imposing on the silicon (10) in molten state conditions that are favourable for the solidification thereof, the mean temporal velocity for the duration of step b) of propagating the solidification front (13) of the silicon, measured along the longitudinal axis (X) of the container (1), being no lower than 5 µm/s, preferably 10 µm/s; said method being characterised in that at least one stirring system (30) imposes, during all or part of step b), a flow of silicon (10) in molten state with a Reynolds number comprised between 3 104 and 3 106, preferably between 105 and 106.</p>
申请公布号 WO2013105060(A1) 申请公布日期 2013.07.18
申请号 WO2013IB50275 申请日期 2013.01.11
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIESALTERNATIVES 发明人 GARANDET, JEAN-PAUL;ALBARIC, MICKAEL;AUDOIN, CLAIRE;CHAVRIER, DENIS;PIHAN, ETIENNE
分类号 C01B33/037;C30B11/00 主分类号 C01B33/037
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