发明名称 |
FIELD EFFECT TRANSISTOR WITH SELF-ALIGNED SOURCE AND HEAVY BODY REGIONS |
摘要 |
A field effect transistor includes a plurality of trenches extending into a semiconductor region of a first conductivity type. The plurality of trenches includes a plurality of gated trenches and a plurality of non-gated trenches. A body region of a second conductivity extends in the semiconductor region between adjacent trenches. A dielectric material fills a bottom portion of each of the gated and non-gated trenches. A gate electrode is disposed in each gated trench. A conductive material of the second conductivity type is disposed in each non-gated trench such that the conductive material and contacts corresponding body regions along sidewalls of the non-gated trench.
|
申请公布号 |
US2013181282(A1) |
申请公布日期 |
2013.07.18 |
申请号 |
US201213633038 |
申请日期 |
2012.10.01 |
申请人 |
FAIRCHILD SEMICONDUCTOR CORPORATION;FAIRCHILD SEMICONDUCTOR CORPORATION |
发明人 |
YILMAZ HAMZA;CALAFUT DANIEL;SAPP STEVEN;KRAFT NATHAN |
分类号 |
H01L29/78;H01L29/66 |
主分类号 |
H01L29/78 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|