发明名称 |
Semiconductor component including a lateral transistor component |
摘要 |
A semiconductor arrangement is disclosed. One embodiment includes a first semiconductor layer including a first and second component zone that form a pn-junction or a Schottky-junction. A second semiconductor layer includes a drift control zone adjacent to the second component zone. A dielectric layer separates the first semiconductor layer from the second semiconductor layer. A rectifying element is coupled between the drift control zone and the second component zone.
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申请公布号 |
US8487307(B2) |
申请公布日期 |
2013.07.16 |
申请号 |
US201113332505 |
申请日期 |
2011.12.21 |
申请人 |
WEYERS JOACHIM;MAUDER ANTON;HIRLER FRANZ;KUEPPER PAUL;INFINEON TECHNOLOGIES AUSTRIA AG |
发明人 |
WEYERS JOACHIM;MAUDER ANTON;HIRLER FRANZ;KUEPPER PAUL |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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