发明名称 Substrate reactor with adjustable injectors for mixing gases within reaction chamber
摘要 Methods and apparatuses for separately injecting gases into a reactor for a substrate processing system. The flow profiles of the gases are controlled with two or more sets of adjustable gas flow injectors. The methods are particularly useful for selective deposition of gases in a CVD system using volatile combinations of precursors and etchants. In either case, the gases are provided along separate flow paths that intersect in a relatively open reaction space, rather than in more confined upstream locations.
申请公布号 US8486191(B2) 申请公布日期 2013.07.16
申请号 US20090420010 申请日期 2009.04.07
申请人 AGGARWAL RAVINDER;CONNER RAND;DISANTO JOHN;ALEXANDER JAMES A.;ASM AMERICA, INC. 发明人 AGGARWAL RAVINDER;CONNER RAND;DISANTO JOHN;ALEXANDER JAMES A.
分类号 C23C16/455;C23C16/06;C23C16/22;C23C16/52;C23F1/00;H01L21/306 主分类号 C23C16/455
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