发明名称 |
CIRCUITO DI LETTURA DI CELLE DI MEMORIA NON VOLATILI E SISTEMA DI MEMORIA COMPRENDENTE IL CIRCUITO |
摘要 |
<p>A circuit for reading memory cells includes: a sense node connectable to a memory cell; a sense device connected to the sense node and configured to be activated in a precharging step which precedes a cell reading step and to provide such an output signal to assume logic values dependent on an electric signal present at the sense node; a precharging circuit connected to the sense node and configured to be activated to make the sense node reach a precharging voltage and to be deactivated upon the output signal switching in the precharging step.</p> |
申请公布号 |
IT1401091(B1) |
申请公布日期 |
2013.07.12 |
申请号 |
IT2010MI01080 |
申请日期 |
2010.06.15 |
申请人 |
STMICROELECTRONICS S.R.L. |
发明人 |
PERRONI MAURIZIO FRANCESCO;CASTAGNAGIUSEPPE |
分类号 |
|
主分类号 |
|
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|