发明名称 CIRCUITO DI LETTURA DI CELLE DI MEMORIA NON VOLATILI E SISTEMA DI MEMORIA COMPRENDENTE IL CIRCUITO
摘要 <p>A circuit for reading memory cells includes: a sense node connectable to a memory cell; a sense device connected to the sense node and configured to be activated in a precharging step which precedes a cell reading step and to provide such an output signal to assume logic values dependent on an electric signal present at the sense node; a precharging circuit connected to the sense node and configured to be activated to make the sense node reach a precharging voltage and to be deactivated upon the output signal switching in the precharging step.</p>
申请公布号 IT1401091(B1) 申请公布日期 2013.07.12
申请号 IT2010MI01080 申请日期 2010.06.15
申请人 STMICROELECTRONICS S.R.L. 发明人 PERRONI MAURIZIO FRANCESCO;CASTAGNAGIUSEPPE
分类号 主分类号
代理机构 代理人
主权项
地址