发明名称 |
TRANSISTOR, METHOD FOR FORMING ELECTRIC CURRENT CHANNEL IN SUBSTRATE, AND MOBILE ELECTRONIC DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming an electric current channel in a substrate having a first conduction type.SOLUTION: A method comprises forming an impurity region 314 that has a second conduction type and extends from a surface of a substrate to a first depth position. A hole 350 is formed in the impurity region. First dielectric layers 360 to 364 are formed on an inner surface of the hole. A first electrode 306 is formed in the hole adjacent to the dielectric layers. |
申请公布号 |
JP2013138254(A) |
申请公布日期 |
2013.07.11 |
申请号 |
JP20130054709 |
申请日期 |
2013.03.18 |
申请人 |
TEXAS INSTRUMENTS INC |
发明人 |
HAO PINGHAI;MITROS JOZEF;WU XIAOJU |
分类号 |
H01L21/336;H01L21/8247;H01L21/28;H01L27/115;H01L29/423;H01L29/788;H01L29/792 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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