发明名称 TRANSISTOR, METHOD FOR FORMING ELECTRIC CURRENT CHANNEL IN SUBSTRATE, AND MOBILE ELECTRONIC DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a method for forming an electric current channel in a substrate having a first conduction type.SOLUTION: A method comprises forming an impurity region 314 that has a second conduction type and extends from a surface of a substrate to a first depth position. A hole 350 is formed in the impurity region. First dielectric layers 360 to 364 are formed on an inner surface of the hole. A first electrode 306 is formed in the hole adjacent to the dielectric layers.
申请公布号 JP2013138254(A) 申请公布日期 2013.07.11
申请号 JP20130054709 申请日期 2013.03.18
申请人 TEXAS INSTRUMENTS INC 发明人 HAO PINGHAI;MITROS JOZEF;WU XIAOJU
分类号 H01L21/336;H01L21/8247;H01L21/28;H01L27/115;H01L29/423;H01L29/788;H01L29/792 主分类号 H01L21/336
代理机构 代理人
主权项
地址