发明名称 |
METHOD OF MANUFACTURING HETEROJUNCTION BIPOLAR TRANSISTOR AND HETEROJUNCTION BIPOLAR TRANSISTOR |
摘要 |
A method of forming a heterojunction bipolar transistor by depositing a first stack comprising an polysilicon layer and a sacrificial layer on a mono-crystalline silicon substrate surface; patterning that stack to form a trench extending to the substrate; depositing a silicon layer over the resultant structure; depositing a silicon-germanium-carbon layer over the resultant structure; selectively removing the silicon-germanium-carbon layer from the sidewalls of the trench; depositing a boron-doped silicon-germanium-carbon layer over the resultant structure; depositing a further silicon-germanium-carbon layer over the resultant structure; depositing a boron-doped further silicon layer over the resultant structure; forming dielectric spacers on the trench sidewalls; filling the trench with emitter material; exposing polysilicon regions outside the trench side walls by selectively removing the sacrificial layer; implanting boron impurities into the exposed polysilicon regions to define base implants; and exposing the resultant structure to a thermal budget for annealing the boron impurities.
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申请公布号 |
US2013178037(A1) |
申请公布日期 |
2013.07.11 |
申请号 |
US201213547067 |
申请日期 |
2012.07.12 |
申请人 |
MEUNIER-BEILLARD PHILIPPE;DONKERS JOHANNES JOSEPHUS THEODORUS MARINUS;MERTENS HANS;VANHOUCKE TONY;NXP B.V. |
发明人 |
MEUNIER-BEILLARD PHILIPPE;DONKERS JOHANNES JOSEPHUS THEODORUS MARINUS;MERTENS HANS;VANHOUCKE TONY |
分类号 |
H01L29/66 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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