发明名称 METHOD FOR PRODUCTION OF A STRUCTURE WITH A BURIED ELECTRODE BY DIRECT TRANSFER AND STUCTURE OBTAINED IN THIS MANNER
摘要 A device is described of the micro-system and/or nano-system type including: a first substrate, including at least one electrode, called the lower electrode, and at least one dielectric layer, an intermediate substrate, extending across a plane, called the main plane of the device, including a moving portion, an upper substrate, attached to the intermediate substrate, where the said moving portion can be made to move between the lower electrode and the upper substrate.
申请公布号 US2013175643(A1) 申请公布日期 2013.07.11
申请号 US201213546751 申请日期 2012.07.11
申请人 BERTHELOT AUDREY;LARREY VINCENT;POLIZZI JEAN-PHILIPPE;VAUDAINE MARIE-HELENE;DESAI HEMANT;PARK WOO TAE;FREESCALE SEMICONDUCTOR, INC.;COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT 发明人 BERTHELOT AUDREY;LARREY VINCENT;POLIZZI JEAN-PHILIPPE;VAUDAINE MARIE-HELENE;DESAI HEMANT;PARK WOO TAE
分类号 B81C1/00;B81B3/00 主分类号 B81C1/00
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