| 摘要 |
<p>High-electron-mobility field-effect transistor (100, 105, 110) comprising a multilayer stack, fabricated in a z-direction, comprising a substrate (3) on which is arranged a semiconductor bar (2) comprising a buffer layer (8), an active layer (7) and a heterojunction (15) that extends continuously in an xy-plane perpendicular to the z-direction, the transistor comprising electrodes (4, 5, 6) deposited on the side (20) of the semiconductor bar opposite the substrate (3), called the top side (20), the electrodes (4, 5, 6) extending longitudinally in a longitudinal y-direction and being spaced out in a transverse x-direction orthogonal to the y-direction so that a gate (6) is placed between a source (4) and a drain (5) adjacent to said source (4), the semiconductor bar (2) comprising at least one elementary region (ei), said elementary region (ei) being a region extending continuously in the transverse direction from a source (4) as far as a drain (5) adjacent to said source (4), which source and drain extend along their entire length over said elementary region (ei), in which region at least one isolating well (19) and at least one conductive region (18) extend continuously, over the whole transverse dimension of the elementary region (ei).
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