POWER DEVICES AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A power devices and a method for manufacturing the same are provided to increase withstand voltage by alternately arranging a first drift region and a second drift region. CONSTITUTION: N+-GaN layers (300,440) are formed on a substrate. First and second drift layers (410,420) are alternately laminated between the N+-GaN layers. The first drift layer includes a P-GaN and/or a U-GaN. The second drift layer includes an N-GaN and/or AlGaN. A source electrode pattern (620), a drain electrode pattern (630), and a gate electrode pattern (610) are formed on the N+-GaN layer.