发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
<p>Oxygen is released from the insulating layer, whereby oxygen deficiency in the oxide semiconductor layer and an interface state between the insulating layer and the oxide semiconductor layer can be reduced. Accordingly, a semiconductor device where reliability is high and variation in electric characteristics is small can be manufactured.</p> |
申请公布号 |
KR20130077839(A) |
申请公布日期 |
2013.07.09 |
申请号 |
KR20127032781 |
申请日期 |
2011.05.11 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
ENDO YUTA;SASAKI TOSHINARI;NODA KOSEI;SATO MIZUHO |
分类号 |
H01L29/786;G02F1/136;H01L21/336 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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