发明名称 |
Exposure mask and method for manufacturing same and method for manufacturing semiconductor device |
摘要 |
An exposure mask includes: an insulative substrate; a light reflecting film provided on the substrate; a light absorbing film provided on the light reflecting film and forming a pattern in a center region on the substrate; and an interconnect provided on the substrate, the light reflecting film and the light absorbing film not being provided in a frame-shaped region surrounding the center region, and the interconnect being placed so that a portion of a laminated film composed of the light reflecting film and the light absorbing film located inside the frame-shaped region is electrically connected to a portion of the laminated film located outside the frame-shaped region. |
申请公布号 |
US8216744(B2) |
申请公布日期 |
2012.07.10 |
申请号 |
US20100700457 |
申请日期 |
2010.02.04 |
申请人 |
ITOH MASAMITSU;KABUSHIKI KAISHA TOSHIBA |
发明人 |
ITOH MASAMITSU |
分类号 |
G03F1/40;G03F1/22;G03F1/24;G03F1/84;G03F1/86;H01L21/027 |
主分类号 |
G03F1/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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