发明名称 PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS FOR SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To provide a plasma processing method for a substrate, which can form convexoconcave structures with uniform heights, when performing plasma processing to a sapphire substrate to form the convexoconcave structures corresponding to a mask pattern thereon.SOLUTION: The plasma processing method includes: a substrate loading step of loading a plurality of sapphire substrates having mask patterns formed on surfaces thereof in a chamber with the substrates being stored in a tray at a plurality of substrate storage portions, and mounting the sapphire substrates respectively on a plurality of substrate holding portions; and a plasma processing step of subjecting each of the sapphire substrates to plasma processing while filling a space between the substrate holding portions and the sapphire substrates with He gas, and forming the convexoconcave structures corresponding to the mask patterns on each of the surfaces of the sapphire substrates. In the plasma processing step, the plasma processing is performed in a state that a pressure of He gas in the space in a central region of the sapphire substrate is lower than a pressure of He gas in a peripheral region.
申请公布号 JP2013135110(A) 申请公布日期 2013.07.08
申请号 JP20110285127 申请日期 2011.12.27
申请人 PANASONIC CORP 发明人 OKITA SHOGO;WATANABE SHOZO
分类号 H01L21/3065 主分类号 H01L21/3065
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