| 摘要 |
The present invention relates to the technical field of display device manufacturing, and provides a thin film transistor (TFT), an array substrate and a manufacturing method thereof, and a display device, so as to avoid damage on a semiconductor active layer caused by direct illumination and etching, thereby improving the performance of a TFT device. The TFT comprises: a gate, a gate insulation layer, a semiconductor active layer, an etch-stop layer, a source, and a drain. The etch-stop layer covers the semiconductor active layer, and a first through hole and a second through hole are formed in the etch-stop layer. The source of the TFT contacts with the semiconductor active layer through the first through hole, and the drain of the TFT contacts with the semiconductor active layer through the second through hole. |
