发明名称 TERNARY INVERTER ON CMOS TRANSISTORS
摘要 FIELD: radio engineering. ^ SUBSTANCE: invention is related to digital equipment and may be used to perform logical function of inversion in ternary devices. Ternary inverter consists of inverting circuits (1)-(4), trigger circuits (5) and (6), complementary keys (7)-(10) on the basis of MOS transistors. Inlet is represented by inlets of circuits (1) and (2). Each inverting circuit comprises complementary pairs of transistors, gates and drains of which are joined in pairs. Each trigger circuit consists of two components on the basis of complementary pair of transistors. Inverting circuits, trigger circuits and complementary keys are connected such as specified in invention formula. With specified logical condition at the inlet, keys are closed so that voltage at the outlet complies with required value of ternary code. In case of any logical condition at the outlet, through static current flow becomes impossible due to availability of transistors in cutoff mode. ^ EFFECT: reduced static consumed power due to reduction of static current values down to values specified by leakage currents of MOS transistors. ^ 5 dwg; 2 tbl
申请公布号 RU2373639(C1) 申请公布日期 2009.11.20
申请号 RU20080116106 申请日期 2008.04.23
申请人 GOSUDARSTVENNOE OBRAZOVATEL'NOE UCHREZHDENIE VYSSHEGO PROFESSIONAL'NOGO OBRAZOVANIJA "SANKT-PETERBURGSKIJ GOSUDARSTVENNYJ POLITEKHNICHESKIJ UNIVERSITET" (GOU "SPBGPU") 发明人 MOROZOV DMITRIJ VALER'EVICH;PILIPKO MIKHAIL MIKHAJLOVICH;KOROTKOV ALEKSANDR STANISLAVOVICH
分类号 H03K19/0948;H03K19/20 主分类号 H03K19/0948
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