METHOD FOR MANUFACTURING THIN FILM AND APPARATUS FOR THEREOF

摘要

PURPOSE: A method for forming a thin film and a manufacturing apparatus thereof are provided to improve the deposition efficiency of the thin film by sufficiently giving reaction time between process gases. CONSTITUTION: The supply of reaction gases and source gases to a substrate is blocked (S120). Purge gases are supplied to a chamber (S121). The purge gases supplied to the chamber are blocked (S122). The reaction gases are supplied to the chamber (S123). [Reference numerals] (AA) Source gas; (BB) Purge gas; (CC) Reaction gas; (DD,EE) Repeat thin film deposition of one cycle n-times; (S120) Reaction gas and a source gas are blocked; (S121) Purge gas is supplied; (S122) Purge gas is blocked; (S123) Reaction gas is supplied