| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a high frequency power amplifier which implements stable characteristics independent of manufacturing variations.SOLUTION: Semiconductor devices (1-4) each include: a high frequency amplification section (11 (21, 31, 41)) including a single or a plurality of transistors (Q4, Q8) for outputting an amplified RF signal input thereinto; and a bias voltage generation section (10 (40)) for generating a bias voltage (Vcont (Vcont1, Vcont2)) for the high frequency amplification section. The bias voltage generation section performs a discrimination process of determining in which of a plurality of preset current ranges (801-803) a monitor current (Icont (Icont1, Icont2)) proportional to an idle current (Icq4 (Icq8)) flowing through the transistors is included, and generates a voltage depending on the discriminated current range in outputting the bias voltage. |
