发明名称 |
Process for Growth of Graphene |
摘要 |
The present disclosure relates to a process for growth of graphene at a temperature above 1400° C. on a silicon carbide surface by sublimation of silicon from the surface. The process comprises heating under special conditions up to growth temperature which ensured that the surface undergoes the proper modification for allowing homogenous graphene in one or more monolayers.
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申请公布号 |
US2013171347(A1) |
申请公布日期 |
2013.07.04 |
申请号 |
US201113823392 |
申请日期 |
2011.03.23 |
申请人 |
YAKIMOVA ROSITSA;IAKIMOV TIHOMIR;SYVAJARVI MIKAEL |
发明人 |
YAKIMOVA ROSITSA;IAKIMOV TIHOMIR;SYVAJARVI MIKAEL |
分类号 |
C01B31/04 |
主分类号 |
C01B31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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