| 摘要 |
PROBLEM TO BE SOLVED: To prevent SiHClgas from being mixed with other treatment gases at least outside a chamber and to control generation of particles due to a reaction by-product of the gases.SOLUTION: A film forming apparatus includes: a showerhead provided in a chamber 102 and including a plurality of discharge holes which discharge gases introduced from a plurality of gas feed ports to a wafer W; an NHsupply line 210A which supplies NHgas to the gas feed port of the showerhead; an SiHClsupply line 210B which supplies SiHClgas to the gas feed port of the showerhead; and a TiClsupply line 210C which supplies TiClgas to the gas feed port of the showerhead, wherein the SiHClsupply line is independently provided so as not to join together with other supply lines at least up to the gas feed port. |
