| 摘要 |
PURPOSE: A CVD apparatus is provided to improve the uniformity of a thin film deposited on a substrate and to prevent the generation of particles. CONSTITUTION: A chamber (100) provides a substrate process space. A substrate (120) is formed in the chamber. A shower head (140) is formed in the lower part of the substrate. The shower head supplies a process gas to the lower surface of the substrate. A heater heats the substrate.
|
