SEMICONDUCTOR DEVICE HAVING POLY-GATE AND METHOD OF FABRICATING THE SAME

摘要

PURPOSE: A semiconductor device and a method for manufacturing the same are provided to decrease a poly depletion phenomenon by doping impurity ions in the lower part of a polygate. CONSTITUTION: A gate insulating layer pattern (320) is arranged on a substrate. An amorphous silicon layer pattern (331) is arranged on the gate insulating layer pattern. A polygate has an amorphous silicon layer pattern and a poly silicon layer pattern (333). The amorphous silicon layer pattern has a doping structure including diffusion prevention ions. The diffusion prevention ions restrain the diffusion of impurity ions.