发明名称 Image sensor
摘要 An example embodiment of the image sensor includes a light-sensing device including a first electrode, a second electrode disposed opposite to the first electrode, and a photoelectric conversion layer positioned between the first electrode and the second electrode. The photoelectric conversion layer includes a block copolymer including electron donating blocks and electron accepting blocks. The electron donating blocks are deposited together and connected to the first electrode and the second electrode. The electron accepting blocks are deposited together and connected to the first electrode and the second electrode. A color filter may be positioned on the second electrode of the light-sensing device.
申请公布号 US8476682(B2) 申请公布日期 2013.07.02
申请号 US201113224613 申请日期 2011.09.02
申请人 KIM DO HWAN;CHOI WOONG;PARK KYUNG BAE;KIM KYU SIK;JIN YONG WAN;LEE KWANG HEE;SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM DO HWAN;CHOI WOONG;PARK KYUNG BAE;KIM KYU SIK;JIN YONG WAN;LEE KWANG HEE
分类号 H01L0027/000048 主分类号 H01L0027/000048
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