发明名称 |
DYNAMIC SEMICONDUCTOR MEMORY DEVICE |
摘要 |
A dynamic semiconductor memory device of an open bit-line type includes a plurality of first wiring lines running on common opposite electrodes for forming opposite electrodes of memory cell capacitors and connected to the common opposite electrodes at a number of contact points. A second wiring line is connected to the ends of the first wiring lines and to a voltage supply line at the center point of the second wiring line, so that the potential distribution of the common opposite electrodes can be equalized precisely. |
申请公布号 |
DE3380542(D1) |
申请公布日期 |
1989.10.12 |
申请号 |
DE19833380542 |
申请日期 |
1983.06.28 |
申请人 |
FUJITSU LIMITED |
发明人 |
NAKANO, TOMIO;NAKANO, MASAO;OGAWA, JUNJI |
分类号 |
G11C11/401;G11C5/14;G11C11/404;G11C11/4074;H01L21/8242;H01L27/10;H01L27/108;(IPC1-7):G11C11/24 |
主分类号 |
G11C11/401 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|