IR PHOTODETECTORS WITH HIGH DETECTIVITY AT LOW DRIVE VOLTAGE
摘要
<p>An IR photodetector with high detectivity comprises an IR sensitizing layer situated between an electron blocking layer (EBL) and a hole blocking layer (HBL). The EBL and HBL significantly reduce the dark current, resulting in a high detectivity while allowing use of a low applied voltage to the IR photodetector.</p>
申请公布号
SG190378(A1)
申请公布日期
2013.06.28
申请号
SG20130039664
申请日期
2011.10.13
申请人
UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC.;NANOHOLDINGS, LLC
发明人
SO, FRANKY;KIM, DO YOUNG;SARASQUETA, GALILEO;PRADHAN, BHABENDRA, K.
