| 摘要 |
<p>The purpose of the present invention is to enable high-speed switching by driving a power semiconductor element with constant current, and to protect, upon short-circuiting of an arm, the power semiconductor element without breaking even when a low-speed short-circuit protection circuit is used. A gate drive circuit (100) according to the present invention is provided with a first gate charging device (14) that is connected to a gate electrode of a power semiconductor element (1), a second gate charging device (15) that is connected to the gate electrode of the power semiconductor element (1), and a control circuit (13) that controls charging of the gate electrode of the power semiconductor element (1) by the first gate charging device (14) and the second gate charging device (15). The first gate charging device (14) charges the gate electrode of the power semiconductor element (1) with a constant-current generator (45) that has the power supply voltage thereof limited so as to be lower than the power supply voltage of the second gate charging device (15), and the control circuit (13) makes the first gate charging device (14) execute charging at a timing earlier than the second gate charging device (15).</p> |
