发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE |
摘要 |
A semiconductor device includes a substrate including an active region having an isolated shape and a field region. A gate insulation layer is provided on an upper surface of the active region of the substrate. A gate electrode is provided on the gate insulation layer and spaced apart from the boundary of the active region to cover the middle portion of the active region. An impurity region is provided under a surface of the active region that is exposed by the gate electrode.
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申请公布号 |
US2013161711(A1) |
申请公布日期 |
2013.06.27 |
申请号 |
US201213614654 |
申请日期 |
2012.09.13 |
申请人 |
NAM JUNG-SOO;OH JOON-SUK;PARK HYE-YOUNG;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
NAM JUNG-SOO;OH JOON-SUK;PARK HYE-YOUNG |
分类号 |
H01L29/94;H01L29/78 |
主分类号 |
H01L29/94 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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