| 摘要 |
FIELD: physics.SUBSTANCE: tin ions are implanted into quartz glass and the quartz glass implanted with tin ions is annealed in an air atmosphere. Tin ion implantation is carried out in pulsed mode with pulse duration of 0.3-0.4 ms, pulse repetition frequency of 12.5-20 Hz, pulsed ionic current density of 0.8-0.9 mA/cm, exposure dose of (4.5-5)×10ions/cm, tin ion energy of 30-35 keV and silicon dioxide temperature of 60-350°C. Annealing is carried out at temperature of 800-900°C for 50-70 minutes in an air atmosphere.EFFECT: obtaining glass with a high level of radiation intensity in the near-infrared range.2 dwg, 1 tbl, 3 ex |
