发明名称 PRECHARGE CIRCUIT AND NON-VOLATILE MEMORY DEVICE
摘要 A precharge circuit includes a precharge unit configured to apply a voltage of a precharge voltage terminal to a data line during a precharge operation, and a sensing unit configured to disable the precharge unit by sensing the voltage of the precharge voltage terminal, The precharge circuit may control a precharge operation by sensing a change in the voltage level of the precharge voltage terminal.
申请公布号 US2013163362(A1) 申请公布日期 2013.06.27
申请号 US201213718182 申请日期 2012.12.18
申请人 SK HYNIX INC.;SK HYNIX INC. 发明人 KIM SANG-HWAN
分类号 G11C7/00 主分类号 G11C7/00
代理机构 代理人
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