| 摘要 |
PURPOSE: A deposition apparatus is provided to uniformly form a silicon carbide epitaxial layer on a silicon carbide wafer by supplying uniform reaction gas on a silicon carbide wafer. CONSTITUTION: A source gas line(300) supplies reaction gas into a susceptor. The susceptor consists of a susceptor upper plate(210), a susceptor lower plate(220) and a susceptor side plate. One or more holder unit(510) is arranged within the susceptor and supports one or plurality of wafer(W). One or more rotary driving unit(520) rotates the holder unit. A source gas spray unit(400) sprays reaction gas to the one or plurality of wafer.
|
