| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to improve the reliability of a process to form a semiconductor element in a fine structure. CONSTITUTION: An etch stop layer(22) is formed on a lower layer(21). A first insulating layer is formed on the etch stop layer. A hole is formed to expose the lower layer by selectively removing the first insulating layer. A spacer is formed on the inner sidewall of the hole. A second insulating layer(26a) with a pillar shape is formed between the spacers. A conductive layer(27) is buried in a space generated by the first insulating layer and the second insulating layer.
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