发明名称 MICRO DEVICE HAVING THROUGH SILICON ELECTRODE, METHOD OF MANUFACTURING THE SAME AND MULTI CHIP PACKAGE HAVING THE SAME, AND METHOD OF MANUFACTURING THE MULTI CHIP PACKAGE
摘要 <p>PURPOSE: A semiconductor device having a through electrode, a manufacturing method thereof, a stacked package including thereof, and a manufacturing method of the laminated package are provided to form circuit layers on the top and bottom surfaces of a wafer, thereby enabling one wafer to function as two wafers in a stacked semiconductor package having a less thickness. CONSTITUTION: A wafer(101) has a top surface and a bottom surface. A plurality of circuit layers(110, 115) is each formed on the top surface and the bottom surface. A through electrode(135) passing through the wafer connects electrically the circuit layers that are formed on the top surface and the bottom surface of the wafer.</p>
申请公布号 KR20130068485(A) 申请公布日期 2013.06.26
申请号 KR20110135700 申请日期 2011.12.15
申请人 SK HYNIX INC. 发明人 BYEON, SANG JIN
分类号 H01L23/48;H01L23/12 主分类号 H01L23/48
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