发明名称 |
Method of manufacturing oxide thin film transistor |
摘要 |
An oxide thin film transistor and a method of manufacturing the oxide TFT are provided. The oxide thin film transistor (TFT) including: a gate; a channel formed to correspond to the gate, and a capping layer having a higher work function than the channel; a gate insulator disposed between the gate and the channel; and a source and drain respectively contacting either side of the capping layer and the channel and partially on a top surface of the capping layer.
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申请公布号 |
US8470634(B2) |
申请公布日期 |
2013.06.25 |
申请号 |
US201213552185 |
申请日期 |
2012.07.18 |
申请人 |
KIM SUN-IL;LEE JAE-CHEOL;SONG I-HUN;PARK YOUNG-SOO;KIM CHANG-JUNG;PARK JAE-CHUL;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM SUN-IL;LEE JAE-CHEOL;SONG I-HUN;PARK YOUNG-SOO;KIM CHANG-JUNG;PARK JAE-CHUL |
分类号 |
H01L21/00;H01L21/16;H01L21/302;H01L21/84 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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地址 |
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