| 发明名称 |
MATERIAL BASED ON SINGLE CRYSTAL OF Cu7GeSe5I COPPER PENTA-SELENOGERMANATE IODIDE FOR HARD ELECTROLYTIC ENERGY SOURCE |
| 摘要 |
The invention proposes material based on single crystal of Cu7GeSe5I copper penta-selenogermanate iodide for hard-electrolytic energy source having high ionic conductivity and low energy of conductivity activation. |
| 申请公布号 |
UA81137(U) |
申请公布日期 |
2013.06.25 |
| 申请号 |
UA20120014222U |
申请日期 |
2012.12.13 |
| 申请人 |
STATE HIGHER EDUCATIONAL INSTITUTION "UZHGOROD NATIONAL UNIVERSITY" |
发明人 |
STUDENIAK IHOR PETROVYCH;BILANCHUK VASYL VASYLIOVYCH;KOHAN OLEKSANDR PAVLOVYCH;MINETS YURII VASYLIOVYCH |
| 分类号 |
H01M6/18 |
主分类号 |
H01M6/18 |
| 代理机构 |
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