发明名称 |
Process for growing single crystals of Copper (I) hexathiophosphate Cu7PS6 by technique of directional crystallization from the melt |
摘要 |
A process for growing single crystals of copper (I) hexathiophosphate CuPSby technique of directional crystallization from the melt includes stage heating the evacuated quartz ampoules containing initial components copper, phosphorus, sulfur in the desired stoichiometric ratio. Heating is carried out to a maximum temperature and the melt is maintained at this temperature for 24 h. with following growing single crystals. The maximum temperature of the synthesis is 1380 K. The growing is carried out with the growing rate of 3 mm/day in ampoules with the tapered end. |
申请公布号 |
UA81118(U) |
申请公布日期 |
2013.06.25 |
申请号 |
UA20120013995U |
申请日期 |
2012.12.10 |
申请人 |
UZHGOROD NATIONAL UNIVERSITY STATE HIGHER EDUCATIONAL ESTABLISHMENT |
发明人 |
POHODIN ARTEM IHOROVYCH;KOHAN OLEKSANDR PAVLOVYCH;SEVRIUKOV DMYTRO VOLODYMYROVYCH;STUDENIAK IHOR PETROVYCH |
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