| 摘要 |
<P>PROBLEM TO BE SOLVED: To rapidly carry out reaction gas switching when a plurality of types of reaction gases reacting with each other are sequentially supplied to a substrate to form a thin film. <P>SOLUTION: In a gas forming device, a gas-flowing space P1 is formed at the outside of a position separated by 5.0-40.0 mm toward the peripheral side of the center position of a wafer W on a mounting part 3, and process gas and purge gas are supplied to the gas-flowing space P1 from a gas descending space P2 formed on the center part side of the wafer W. The height position and attitude of the mounting part 3 to a top board 4 are set such that the height dimension j for the gas-flowing space P1 is formed evenly across the surface and is 10.0 mm or less, when a film forming process is carried out on the wafer W. <P>COPYRIGHT: (C)2013,JPO&INPIT |
