| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device with reduced on-resistance and input capacitance, and to provide a method of manufacturing the same. <P>SOLUTION: A semiconductor device includes: a second-conductivity-type first region provided on a first-conductivity-type semiconductor layer; a first-conductivity-type second region selectively provided on the first region; a second-conductivity-type third region selectively provided on the first region so as to be adjacent to the second region; a first control electrode provided inside a trench reaching a position deeper than the first region from a first surface of the second region and having a first portion facing the first region and the second region via a first insulating film and a second portion facing the semiconductor layer via a second insulating film thicker than the first insulating film; and a second control electrode provided, in the trench, between the bottom of the trench and the first control electrode and facing the semiconductor layer via a third insulating film thicker than the second insulating film. <P>COPYRIGHT: (C)2013,JPO&INPIT |
